• DocumentCode
    733399
  • Title

    Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

  • Author

    Tatebayashi, Jun ; Kako, Satoshi ; Jinfa Ho ; Ota, Yasutomo ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

  • Author_Institution
    NanoQUINE & IIS, Univ. of Tokyo, Tokyo, Japan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; nanowires; optical pumping; quantum dot lasers; In0.22Ga0.78As-GaAs; electron volt energy 1.37 eV; lasing emission energy; multistacked quantum dots; nanowires; room-temperature lasing; temperature 293 K to 298 K; threshold pump pulse fluence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733399