DocumentCode
733400
Title
Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers
Author
Changyi Li ; Wright, Jeremy B. ; Sheng Liu ; Ping Lu ; Figiel, Jeffrey J. ; Leung, Benjamin ; Ting Shan Luk ; Brener, Igal ; Feezell, Daniel ; Brueck, S.R.J. ; Wang, George T.
Author_Institution
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge.
Keywords
III-V semiconductors; gallium compounds; indium compounds; nanofabrication; nanophotonics; nanowires; optical fabrication; quantum well lasers; semiconductor quantum wires; InGaN-GaN; bottom-up methodology; nonpolar indium gallium nitride-gallium nitride multiquantum-well core-shell nanowire laser fabrication; top-down methodology; Gallium nitride; Laboratories; Optical device fabrication; Optical pumping;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183839
Link To Document