Title :
Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices
Author :
Zuo, D. ; Liu, R. ; Mabon, J. ; He, Z.-Y. ; Liu, S. ; Zhang, Y.-H. ; Kadlec, E.A. ; Olson, B. ; Shaner, E.A. ; Wasserman, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Champaign, IL, USA
Abstract :
We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.
Keywords :
EBIC; III-V semiconductors; carrier lifetime; indium compounds; minority carriers; photoluminescence; semiconductor superlattices; surface recombination; time resolved spectra; InAs-InAsSb; electron beam induced current; minority carrier diffusion length; mobility; optical lifetime measurement; surface recombination velocity; time-resolved photoluminescence; type-II superlattices; vertical diffusivity; Current measurement; Electron beams; Optical variables measurement; Performance evaluation; Photoluminescence; Spontaneous emission; Superlattices;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
