DocumentCode
733409
Title
Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices
Author
Zuo, D. ; Liu, R. ; Mabon, J. ; He, Z.-Y. ; Liu, S. ; Zhang, Y.-H. ; Kadlec, E.A. ; Olson, B. ; Shaner, E.A. ; Wasserman, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Champaign, IL, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.
Keywords
EBIC; III-V semiconductors; carrier lifetime; indium compounds; minority carriers; photoluminescence; semiconductor superlattices; surface recombination; time resolved spectra; InAs-InAsSb; electron beam induced current; minority carrier diffusion length; mobility; optical lifetime measurement; surface recombination velocity; time-resolved photoluminescence; type-II superlattices; vertical diffusivity; Current measurement; Electron beams; Optical variables measurement; Performance evaluation; Photoluminescence; Spontaneous emission; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183848
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