DocumentCode
733465
Title
A black phosphorus FET integrated on a silicon waveguide for high speed, low dark current photodetection
Author
Youngblood, Nathan ; Che Chen ; Koester, Steven J. ; Mo Li
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
A waveguide-integrated black phosphorus photodetector with high responsivity and low dark current is demonstrated for telecom wavelengths with an RC-limited bandwidth of 3 GHz. Electrostatic doping and frequency dependent photoresponse are used to identify photocurrent generation mechanisms.
Keywords
dark conductivity; elemental semiconductors; field effect transistors; integrated optoelectronics; optical waveguides; phosphorus; photoconductivity; photodetectors; semiconductor doping; silicon; P-Si; RC-limited bandwidth; bandwidth 3 GHz; black phosphorus FET; electrostatic doping; frequency dependent photoresponse; high speed low dark current photodetection; photocurrent generation mechanisms; silicon waveguide; telecom wavelengths; waveguide-integrated black phosphorus photodetector; Doping; Graphene; High-speed optical techniques; Logic gates; Optical device fabrication; Optical waveguides; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183904
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