DocumentCode :
733467
Title :
A direct band gap GeSn laser on Si
Author :
Geiger, R. ; Wirths, S. ; Buca, D. ; Sigg, H. ; von den Driesch, N. ; Ikonic, Z. ; Hartmann, J.M. ; Faist, J. ; Mantl, S. ; Grutzmacher, D.
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Temperature-dependent photoluminescence spectroscopy reveals that partially strain-relaxed Ge0.87Sn0.13 exhibits a fundamental direct band gap. For such an alloy, we show lasing at ≈ 2.3 μm emission wavelength under optical pumping up to 90 K.
Keywords :
germanium compounds; laser beams; optical pumping; photoluminescence; semiconductor lasers; silicon; GeSn-Si; direct band gap GeSn laser on Si; emission wavelength; fundamental direct band gap; optical pumping; partially strain-relaxed Ge0.87Sn0.13; temperature 90 K; temperature-dependent photoluminescence spectroscopy; wavelength 2.3 mum; Cavity resonators; Optical pumping; Optical waveguides; Photonic band gap; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183906
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733467
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