DocumentCode :
733468
Title :
Monolithically grown superluminescent diodes on germanium and silicon substrates
Author :
Qi Jiang ; Siming Chen ; Mingchu Tang ; Jiang Wu ; Seeds, Alywn ; Hui Yun
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on both Ge and Si substrates by molecular beam epitaxy. The QD SLDs on Ge substrates exhibit a 3 dB emission bandwidth of ~60 nm with output power of 27 mW at room temperature, and operates up to 100 °C. We also report the first QD SLD monolithically grown on a Si substrate. A two-section ridge structure has been used to achieve a close-to-Gaussian emission spectrum of 114 nm centered at ~1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; germanium; indium compounds; light sources; molecular beam epitaxial growth; optical fabrication; semiconductor quantum dots; silicon; superluminescent diodes; Ge; InAs-GaAs; InAs-GaAs quantum-dot superluminescent diode; QD SLD; Si; close-to-Gaussian emission spectrum; emission bandwidth; germanium substrates; molecular beam epitaxy; power 2.6 mW; power 27 mW; room temperature; silicon substrates; temperature 100 degC; temperature 293 K to 298 K; two-section ridge structure; wavelength 114 nm; wavelength 1255 nm; Gallium arsenide; Power generation; Quantum dot lasers; Quantum dots; Silicon; Substrates; Superluminescent diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183907
Link To Document :
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