Title :
Enhancement of THz emission from GaN surface by Ga vacancy-related defects
Author :
Sakai, Yuji ; Kawayama, Iwao ; Nakanishi, Hidetoshi ; Tonouchi, Masayoshi
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
Abstract :
The enhancement of terahertz emission from a GaN wafer induced by Ga vacancy-related defects was observed. This phenomena can be explained by the change of the band bending at these defects.
Keywords :
III-V semiconductors; gallium compounds; terahertz wave imaging; terahertz waves; GaN; gallium nitride wafer; gallium vacancy-related defects; terahertz emission enhancement; Gallium nitride; Luminescence; Nonlinear optics; Optical harmonic generation; Optical imaging; Optical pulses; Principal component analysis;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
