• DocumentCode
    733472
  • Title

    Enhancement of THz emission from GaN surface by Ga vacancy-related defects

  • Author

    Sakai, Yuji ; Kawayama, Iwao ; Nakanishi, Hidetoshi ; Tonouchi, Masayoshi

  • Author_Institution
    Inst. of Laser Eng., Osaka Univ., Suita, Japan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The enhancement of terahertz emission from a GaN wafer induced by Ga vacancy-related defects was observed. This phenomena can be explained by the change of the band bending at these defects.
  • Keywords
    III-V semiconductors; gallium compounds; terahertz wave imaging; terahertz waves; GaN; gallium nitride wafer; gallium vacancy-related defects; terahertz emission enhancement; Gallium nitride; Luminescence; Nonlinear optics; Optical harmonic generation; Optical imaging; Optical pulses; Principal component analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733472