Influence of Al/Ge ratio on radiation-induced attenuation in nanostructured erbium-doped fibers preforms

Author

Leon, M. ; Lancry, M. ; Ollier, N. ; Bigot, L. ; El Hamzaoui, H. ; Savelii, Inna ; Pastouret, A. ; Burov, E. ; Poumellec, B. ; Bouazaoui, M.

Author_Institution

Inst. de Chim. Mol. et des Mater. d´Orsay, Univ. Paris Sud, Orsay, France

fYear

2015

fDate

10-15 May 2015

Firstpage

1

Lastpage

2

Abstract

We have compared the radiation resistance of various Er³⁺-doped fiber preforms manufactured with different technologies: Si and Al nanoparticles doped fibers, and standard MCVD fibers. All of them have been irradiated with a total gamma dose of 5.9 kGy and then studied using absorption and EPR spectroscopies.

Keywords

aluminium; chemical vapour deposition; erbium; gamma-ray effects; germanium; nanoparticles; nanophotonics; optical fibres; paramagnetic resonance; preforms; silicon; silicon compounds; ultraviolet spectra; visible spectra; EPR spectroscopy; SiO₂:Er,Al; SiO₂:Er,Ge; SiO₂:Er,Si; absorption spectroscopy; gamma dose; nanoparticle doped fibers; nanostructured erbium-doped fiber preforms; radiation absorbed dose 5.9 kGy; radiation resistance; radiation-induced attenuation; standard MCVD fibers; Erbium; Optical attenuators; Optical fiber amplifiers; Optical fiber communication; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2015 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

7183929