• DocumentCode
    733538
  • Title

    3-D scanning mid-IR imaging of buried structures using extremely nondegenerate two-photon absorption in a GaN photodiode

  • Author

    Pattanaik, Himansu S. ; Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.

  • Author_Institution
    Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a scanning 3-D IR imaging technique using extremely nondegenerate two-photon absorption in an uncooled GaN photodiode, and obtain ~2 μm depth resolution at a wavelength of ~5 μm in buried semiconductor structures.
  • Keywords
    III-V semiconductors; gallium compounds; infrared imaging; photodiodes; two-photon processes; 3-D scanning midIR imaging; GaN; buried semiconductor structures; extremely nondegenerate two-photon absorption; uncooled GaN photodiode; wavelength 5 mum; Absorption; Gallium nitride; Imaging; Logic gates; Photodiodes; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183978