Title :
Enhanced responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 photoconductors by integration of interdigitated electrodes
Author :
Pham, Thach ; Conley, Benjamin R. ; Margetis, Joe ; Huong Tran ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Wei Du ; Sun, Greg ; Soref, Richard A. ; Tolle, John ; Naseem, Hameed A. ; Baohua Li ; Shui-Qing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
Keywords :
germanium compounds; infrared detectors; integrated optics; optical fabrication; optical testing; photoconducting devices; photodetectors; silicon; CMOS-compatible process; Si-Ge0.9Sn0.1; interdigitated electrode integration; photoconductive gain enhancement; photoconductor fabrication; temperature-dependent responsivity measurement; temperature-dependent specific detectivity measurement; Detectors; Electrodes; Noise; Optical imaging; Photoconducting materials; Silicon; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
