• DocumentCode
    733620
  • Title

    The optical absorption in zincblende and wurtzite GaP nanowire polytypes

  • Author

    Aghaeipour, Mahtab ; Anttu, Nicklas ; Nylund, Gustav ; Samuelson, Lars ; Lehmann, Sebastian ; Pistol, Mats-Erik

  • Author_Institution
    Div. of Solid State Phys., Lund Univ., Lund, Sweden
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The geometry dependence of the absorption in semiconductor nanowires is of large interest currently, and especially the diameter-dependent absorption resonances are promising for tunable detectors. Here, we show that these resonances for both wurtzite and zincblende GaP nanowires can be tuned down to λ ~ 330 nm by decreasing the diameter to 35 nm. This stop of the shifting at λ ~ 330 nm indicates that both polytypes show a critical point in the refractive index in this region of the ultra violet regime. This similarity of the resonant response in both polytypes of GaP nanowires is in strong contrast to the case of InP and InAs nanowires.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light absorption; nanophotonics; nanowires; refractive index; ultraviolet spectra; GaP; InAs; InAs nanowires; InP; InP nanowires; critical point; diameter-dependent absorption resonances; optical absorption; refractive index; semiconductor nanowires; size 35 nm; tunable detector; ultraviolet regime; wavelength 330 nm; wurtzite GaP nanowire polytypes; zincblende GaP nanowire polytypes; Absorption; Arrays; III-V semiconductor materials; Indium phosphide; Optical refraction; Optical variables control; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7184061