Title :
Long-infrared InAs-based quantum cascade lasers
Author :
Chastanet, D. ; Bousseksou, A. ; Colombelli, R. ; Lollia, G. ; Bahriz, M. ; Baranov, A.N. ; Teissier, R.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud, Orsay, France
Abstract :
This paper develops a new generation of InAs/AlSb based quantum cascade lasers (QCLs) covering the 16-35 μm spectral region. The study targets high performance, in terms of output power, single mode operation and maximum operating temperature. Here, recent developments on InAs/AlSb based QCLs operating at wavelengths of 17-19 μm are reported. The maximum operating temperature achieved is 333 K at λ=17.9 μm. These values represent a new reference at long IR wavelengths. Distributed feedback (DFB) lasers featuring spectrally single mode operation are also reported.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; indium compounds; laser beams; laser modes; quantum cascade lasers; DFB lasers; InAs-AlSb; QCL; distributed feedback lasers; long-infrared InAs-based quantum cascade lasers; maximum operating temperature; output power; spectrally single mode operation; temperature 333 K; wavelength 16 mum to 35 mum; Effective mass; Geometry; Indium gallium arsenide; Optical refraction; Optical waveguides; Quantum cascade lasers; Semiconductor waveguides;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
