Title :
5 × 20 Gb/s III-V on silicon electroabsorption modulator array heterogeneously integrated with a 1.6nm channel-spacing silicon AWG
Author :
Xin Fu ; Qiangsheng Huang ; Yingtao Hu ; Tassaert, Martijn ; Verbist, Jochem ; Jianxin Cheng ; Keqi Ma ; Jianhao Zhang ; Kaixuan Chen ; Chenzhao Zhang ; Yaocheng Shi ; Bauwelinck, Johan ; Roelkens, Gunther ; Liu Liu ; Sailing He
Author_Institution :
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou, China
Abstract :
We demonstrate a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 1.6nm channel-spacing arrayed-waveguide grating and a 20Gbps electroabsorption modulator array, showing the potential for 100 Gbps capacity on a 1.5×0.5 mm2 footprint.
Keywords :
III-V semiconductors; aluminium compounds; arrayed waveguide gratings; channel spacing; electro-optical modulation; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; silicon; wavelength division multiplexing; InGaAlAs-Si; arrayed waveguide gratings; bit rate 100 Gbit/s; bit rate 20 Gbit/s; channel-spacing silicon AWG; distance 1.6 nm; electroabsorption modulator array; five-channel wavelength division multiplexed modulator module; heterogeneous integration; Arrayed waveguide gratings; High-speed optical techniques; Modulation; Optical transmitters; Silicon; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
