DocumentCode
733906
Title
1.3-μm InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe bonding
Author
Yuan-Hsuan Jhang ; Tanabe, Katsuaki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; silicon-on-insulator; wafer bonding; III-V-on-Si bonded laser; InAs-GaAs; Si; bonding metal stripe; current injection; metal-stripe wafer bonding technology; quantum dot lasers; room-temperature lasing; silicon-on-insulator substrates; temperature 293 K to 298 K; wavelength 1.3 mum; Bonding; Gallium arsenide; Lasers; Metals; Silicon; Substrates; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184349
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