Title :
Opening up spectrum with InPAs quantum dot lasers
Author :
Karomi, I. ; Shutts, S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
Electrically injected MOVPE grown InPAs quantum dot lasers emitting at wavelengths longer than 770nm are demonstrated with 300K threshold current density of 260Acm-2 for 2mm long uncoated facet devices and operation up to 370K.
Keywords :
III-V semiconductors; MOCVD; current density; indium compounds; phosphorus compounds; quantum dot lasers; semiconductor growth; vapour phase epitaxial growth; InPAs; electrically injected MOVPE grown InPAs quantum dot lasers; size 2 mm; temperature 300 K; temperature 370 K; threshold current density; Absorption; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Indium phosphide; Quantum dot lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
