DocumentCode :
733984
Title :
Performance evaluation of GaN/InGaN heterojunction phototransistors
Author :
Kao, T.-T. ; Kim, J. ; Lee, Y.-C. ; Ji, M.-H. ; Haq, A. ; Detchprohm, T. ; Dupuis, R.D. ; Shen, S.-C.
Author_Institution :
Center for Compound Semicond., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We present a high-performance InGaN/GaN heterojunction phototransistor with the responsivity (Rλ)>8 (A/W) low noise-equivalent-power (NEP) <; 1.1×10-17 (W-Hz-0.5) and high detectivity(D*)> 1.2×1014 (cm-Hz0.5-W-1).
Keywords :
gallium compounds; indium compounds; photodetectors; phototransistors; GaN-InGaN; NEP; high-performance InGaN-GaN heterojunction phototransistor; responsivity low noise-equivalent-power; Gallium nitride; Heterojunctions; Optical devices; Optimized production technology; Performance evaluation; Phototransistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7184428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733984
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