• DocumentCode
    733984
  • Title

    Performance evaluation of GaN/InGaN heterojunction phototransistors

  • Author

    Kao, T.-T. ; Kim, J. ; Lee, Y.-C. ; Ji, M.-H. ; Haq, A. ; Detchprohm, T. ; Dupuis, R.D. ; Shen, S.-C.

  • Author_Institution
    Center for Compound Semicond., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a high-performance InGaN/GaN heterojunction phototransistor with the responsivity (Rλ)>8 (A/W) low noise-equivalent-power (NEP) <; 1.1×10-17 (W-Hz-0.5) and high detectivity(D*)> 1.2×1014 (cm-Hz0.5-W-1).
  • Keywords
    gallium compounds; indium compounds; photodetectors; phototransistors; GaN-InGaN; NEP; high-performance InGaN-GaN heterojunction phototransistor; responsivity low noise-equivalent-power; Gallium nitride; Heterojunctions; Optical devices; Optimized production technology; Performance evaluation; Phototransistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7184428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733984