DocumentCode
733985
Title
Photocurrent gain in graphene-silicon p-i-n junction
Author
Tingyi Gu ; Petrone, Nick ; van der Zande, Arend ; Yilei Li ; Cheng, Austin ; Heinz, Tony F. ; Kim, Philip ; Hone, James ; Chee Wei Wong ; Santori, Charles ; Beausoleil, Raymond
Author_Institution
Columbia Univ., New York, NY, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We demonstrate single atomic cladding layer of graphene enhance the photocurrent profile of the monolithic silicon p-i-n junction, by spatially- and spectrally- resolved photocurrent measurement.
Keywords
elemental semiconductors; graphene; p-n junctions; photoconductivity; silicon; C-Si; graphene-silicon p-i-n junction; monolithic silicon p-i-n junction; photocurrent gain; photocurrent profile; single atomic cladding layer; spatially-resolved photocurrent measurement; spectrally-resolved photocurrent measurement; Graphene; Hot carriers; Junctions; Logic gates; PIN photodiodes; Photoconductivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184429
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