Features of Hgx−1CdxTe anodic sulfdization

Processes of thin sulfide layers on HgCdTe surface formation by anodic sulfdization were investigated in this work. 0.1M Na₂S in ethylene glycol solution was used as an electrolyte. Potentiodynamic curves obtained do not correspond with expected ones from literature [1], but qualitatively represent electrochemical processes occurring - formation of cadmium, tellurium and mercury sulfides. Galvanostatic dependencies verify formation of non-insulating films a composition of which depends on anodization duration. Analysis of the surface chemical composition by XPS has shown that the main components of sulfide films formed are cadmium and mercury sulfides, with tellurium sulfide nearly absenting. The model of sulfide layer formation based on experimental data obtained has been proposed. Voltage-current (I-V) characteristics of Au-native sulfide-HgCdTe structures being rectifying were obtained and analyzed.