Title :
A solar cell, based on the epitaxial layers of AIIIBV compounds, transferred from the substrate onto the flexible polymeric carrier
Author :
Legan, Dmitry M. ; Petrushkov, Mikhail O. ; Emelianov, Eugene A. ; Putyato, Mikhail A. ; Preobrazhenskii, Valery V. ; Pchelyakov, Oleg P.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
An inverted GaAs solar cell structure has been grown with the MBE method. Together with the substrate, the structure was glued to a polymer film of polyethylene terephthalate (PET film) by means of epoxy resin. After the removal of the substrate, the contact platforms were created and the light window was opened. Research of the solar cell photovoltaic properties was conducted at non-concentrated sunlight with the AM 1.5D spectrum. The obtained effciency equal to 16.65%, taking into consideration the absence of the antireflection coating and a grid of contacts on the face of the solar cell, says about its high degree of efficiency.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; polymer films; resins; semiconductor epitaxial layers; solar cells; GaAs; MBE method; PET film; antireflection coating; contact platforms; epitaxial layers; epoxy resin; flexible polymeric carrier; inverted solar cell structure; light window; nonconcentrated sunlight; polyethylene terephthalate; polymer film; solar cell photovoltaic properties; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photovoltaic cells; Physics; Substrates; AIIIBV compounds; MBE; flexible carrier; solar cell;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184484
