Title :
Design of the pHEMT GaAs MIC L-band switch-LNA for autonomous spacecraft radionavigation equipment
Author :
Shkolniy, Vadim N. ; Suntsov, Sergey B. ; Kondratenko, Aleksey V. ; Alekseev, Kirill A. ; Shishkin, Dmitriy A. ; Karaban, Vadim M.
Author_Institution :
Dept. of Design & Test Radioelectron. Equip., JSC "ISS", Zheleznogorsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
The technical solutions design of monolithic integrated circuit (MIC) on-off switch-low-noise amplifier (LNA) of L-band are presented. The design was conducted on the basis of 0.15 microns pHEMT arsenide-gallium technology of own production for application as a part of on-board receivers of the global navigation satellite systems (GNSS) signals of all types orbits spacecraft´s for their autonomous coordinate and time providing.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF amplifiers; UHF integrated circuits; gallium arsenide; integrated circuit design; low noise amplifiers; satellite navigation; space vehicle electronics; space vehicle navigation; GNSS signals; GaAs; L-band; autonomous spacecraft radionavigation equipment; global navigation satellite systems; monolithic integrated circuit design; on-board receivers; on-off switch-low-noise amplifier; pHEMT GaAs MIC L-band switch-LNA design; size 0.15 micron; Gallium arsenide; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; PHEMTs; Switches; Switching circuits; FETs; GNSS-signals; Schottky´s gate; arsenide-gallium technology; low-noise amplifier; monolithic integrated circuits; navigation receiver; on-off switch; semiconductors; spacecraft;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184510
