Title :
High speed low power 384×288 readout integrated circuit for MWIR and LWIR MCT based FPA
Author :
Dvoretskiy, Sergey A. ; Zverev, Alexey V. ; Makarov, Yuriy S. ; Mikhantiev, Eugene A.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.
Keywords :
elemental semiconductors; high-speed integrated circuits; integrated circuit design; low-power electronics; readout electronics; silicon; FPA; LWIR; MCT; MWIR; ROIC; Si; frequency 20 MHz; high speed low power readout integrated circuit; pixel cell electron capacity; power 100 mW; size 25 mum; Arrays; Dynamic range; Microprocessors; Photodiodes; Transistors; 384×288; FPA; MCT; ROIC; Readout;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184549
