Title :
Single and Multiple Cell Upsets in 25-nm NAND Flash Memories
Author :
Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Padova, Padova, Italy
Abstract :
We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ions, including alpha particles. Compared to multilevel cell memories of previous generations, these devices show no apparent error dependence on the program level, adherence to the cosine law, and a large number of multiple cell upsets (MCUs). Floating-gate errors were mapped to their physical location, and MCUs were studied as a function of their multiplicity, direction, particle linear energy transfer, irradiation angle, and program level.
Keywords :
NAND circuits; flash memories; floating point arithmetic; MCU; NAND flash memories; alpha particles; cosine law; floating-gate errors; heavy ions; irradiation angle; multiple cell upsets; particle linear energy transfer; program level; size 25 nm; Alpha particles; Arrays; Flash memories; Ions; Radiation effects; Sensitivity; Threshold voltage; Flash memories; heavy ions; multiple-cell upset; radiation effects; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2273436
