DocumentCode
735280
Title
A configurable TCAM/BCAM/SRAM using 28nm push-rule 6T bit cell
Author
Jeloka, Supreet ; Akesh, Naveen ; Sylvester, Dennis ; Blaauw, David
Author_Institution
Univ. of Michigan, Ann Arbor, MI, USA
fYear
2015
fDate
17-19 June 2015
Abstract
Conventional Content Addressable Memory (BCAM and TCAM) uses specialized 10T / 16T bit cells that are significantly larger than 6T SRAM cells. We propose a new BCAM/TCAM that can operate with standard push-rule 6T SRAM cells, reducing array area by 2-5× and allowing reconfiguration of the CAM as an SRAM. Using a 6T 28nm FDSOI SRAM bit cell, the 64×64 (4kb) BCAM achieves 370 MHz at 1V and consumes 0.6fJ/search/bit.
Keywords
SRAM chips; content-addressable storage; silicon-on-insulator; BCAM; CAM reconfiguration; FDSOI SRAM bit cell; TCAM; conventional content addressable memory; frequency 370 MHz; size 28 nm; standard push-rule 6T SRAM cells; voltage 1 V; Arrays; Computer aided manufacturing; Decoding; Discharges (electric); SRAM cells; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location
Kyoto
Print_ISBN
978-4-86348-502-0
Type
conf
DOI
10.1109/VLSIC.2015.7231285
Filename
7231285
Link To Document