DocumentCode :
736214
Title :
Driving capability of SG FinFET and IG FinFET
Author :
Dubey, Ankja ; Gill, Sandeep Singh
Author_Institution :
GNDEC, Ludhiana, India
fYear :
2015
fDate :
24-25 Jan. 2015
Firstpage :
1
Lastpage :
6
Abstract :
With the downscaling of the MOSFETs it was not possible to further improve the performance of transistors. FinFET provides the best alternative to the classical planar CMOS technology. Because scaling of CMOS technology leads to saturated performance and increased statistical variability. There are various MUGFETs available like Quadruple-Gate FETs, GAA FETs but FinFET provides best alternative so far. These have fully depleted channel so called as DELTA FET also. Shorted Gate FinFET provides better drive current than Independent Gate mode.
Keywords :
CMOS integrated circuits; FinFETs; Logic gates; Metals; Threshold voltage; Dual Gate FinFET; Independent Gate FinFET (IG-FinFET); Shorted Gate FinFET (SG-FinFET); Silicon-on-Insulator (SOI); TCAD; Work function;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical, Electronics, Signals, Communication and Optimization (EESCO), 2015 International Conference on
Conference_Location :
Visakhapatnam, India
Print_ISBN :
978-1-4799-7676-8
Type :
conf
DOI :
10.1109/EESCO.2015.7253742
Filename :
7253742
Link To Document :
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