Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

Author

Jaewook Lee ; Jaeman Jang ; Hyeongjung Kim ; Jiyoul Lee ; Bang-Lin Lee ; Sung-Jin Choi ; Dong Myong Kim ; Dae Hwan Kim ; Kyung Rok Kim

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

35

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

396

Lastpage

398

Abstract

The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V_T)-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V_T-shift while V_T-shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (R_SD) is the main reason for NBS-induced on -current (I_ON) degradation.

Keywords

Schottky barriers; technology CAD (electronics); thin film transistors; NBS instability; NBS time-dependent experimental; NBS-induced on-current degradation; TCAD simulation; gate oxide charge trapping; negative-bias stress instability mechanism; physical origins; polymer-based thin-film transistors; source-drain Schottky contact resistance; subbandgap density-of-state redistribution; threshold voltage shift; Charge carrier processes; Degradation; Logic gates; NIST; Polymers; Stress; Transistors; Negative-bias stress; ON-current degradation; Schottky contact resistance; density-of-states; instability; polymer; redistribution; thin-film transistor; threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2298861

Filename

6720145