Title :
Design Considerations and Testing of Virtual Frisch-Grid CdZnTe Detector Arrays Using the H3D ASIC
Author :
Bolotnikov, A.E. ; Butcher, J. ; Camarda, G.S. ; Yonggang Cui ; De Geronimo, G. ; Fried, J. ; Fochuk, P.M. ; Hossain, Abrar ; Kim, Ki Hyun ; Kopach, O.V. ; Mahler, Grant ; Marshall, Matthew ; McCall, B. ; Petryk, Matthew ; Vernon, E. ; Ge Yang ; James, Ra
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
We discussed the design implementation and results from testing 2 × 2-, 3 × 3-, and 2 × 4-arrays of 6×6 ×15 mm3 CdZnTe virtual Frisch-grid detectors. In these measurements we employed a data acquisition system based on the H3D ASIC developed by BNL´s Instrumentation Division in collaboration with the University of Michigan for 3D position-sensitive detectors. We used CZT crystals with a range of performance attributes to evaluate practical array configurations and detector-assembling procedures. The detector ratings were assigned based on the pulse-height spectra and correlated with data from X-ray diffraction topography measurements and X-ray response mapping obtained at BNL´s National Synchrotron Light Source. The results helped us to better understand the performance limits of these detectors, and to identify future improvements in the array´s design and requirements for the new readout ASIC.
Keywords :
X-ray detection; application specific integrated circuits; data acquisition; integrated circuit design; nuclear electronics; position sensitive particle detectors; readout electronics; semiconductor counters; virtual instrumentation; 3D position-sensitive detectors; BNL Instrumentation Division; BNL National Synchrotron Light Source; CZT crystals; H3D ASIC; University of Michigan; X-ray diffraction topography measurements; X-ray response mapping; data acquisition system; detector-assembling procedure; pulse-height spectra; readout ASIC; virtual Frisch-grid CdZnTe detector arrays; Anodes; Application specific integrated circuits; Cathodes; Crystals; Detectors; Temperature measurement; Testing; CdZnTe; charge-loss correction; crystal defects; virtual Frisch grid detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2274054