Title :
Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters
Author :
Filsecker, Felipe ; Alvarez, Rodrigo ; Bernet, Steffen
Author_Institution :
Elektrotech. Inst., Tech. Univ. Dresden, Dresden, Germany
Abstract :
Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4.5-kV 1.2-kA IGBT and a 4.5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2.5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 °C are investigated. The IGCT and the IGBT are tested using a di/dt-limiting clamp circuit. In addition, the IGBT is tested in hard switching mode.
Keywords :
insulated gate bipolar transistors; limiters; power convertors; switching transients; thyristors; DC-link voltage; IGBT PP devices; IGCT; PP packaging; blocking behavior; blocking voltage; conduction behavior; current 1.2 kA; current 4 kA; di/dt-limiting clamp circuit; hard switching mode; insulated-gate bipolar transistor press-pack devices; integrated gate-commutated thyristors; junction temperatures; laboratory test bench; medium-voltage converters; press-pack IGBT; semiconductor technologies; switching behavior; switching transient characterization; voltage 2.5 kV; voltage 4.5 kV; Clamps; Insulated gate bipolar transistors; Logic gates; Medium voltage; Presses; Switches; Transient analysis; Insulated-gate bipolar transistors (IGBTs); integrated gate-commutated thyristors (IGCTs); power semiconductor devices; semiconductor losses; semiconductor measurements;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2012.2187417
