DocumentCode
737738
Title
Active Dual-Band Frequency Selective Surfaces with Close Band Spacing Based on Switchable Ring Slots
Author
Fabian-Gongora, Henry ; Martynyuk, Alexander E. ; Rodriguez-Cuevas, Jorge ; Martinez-Lopez, Jose I.
Author_Institution
Fac. de Ing., Univ. Nac. Autonoma de Mexico, Mexico City, Mexico
Volume
25
Issue
9
fYear
2015
Firstpage
606
Lastpage
608
Abstract
This letter presents active dual-band frequency selective surfaces (AFSS) with close band spacing based on two switchable ring slots loaded by PIN diode switches. The close band response is achieved by splitting the outer ring slot, and then shifting upward its fundamental resonance beyond the resonance of the inner ring slot. The proposed AFSS can provide four states of operation including lower single-band, upper single-band, dual-band with close band spacing, and reflective mode. Experimental results based on the waveguide simulator show that a frequency ratio of 1.14, with insertion loss lower than 0.82 dB at resonant frequencies, is obtained in the X-band.
Keywords
frequency selective surfaces; p-i-n diodes; semiconductor switches; waveguides; PIN diode switches; X-band; active dual-band frequency selective surfaces; close band response; close band spacing; reflective mode; switchable ring slots; waveguide simulator; Dual band; Frequency selective surfaces; Geometry; PIN photodiodes; Resonant frequency; Switches; Active frequency selective surfaces; PIN diodes; reconfigurable arrays; ring slot resonators;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2015.2451358
Filename
7151851
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