1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs

Author

Osaki, Y. ; Hirose, Tatsuya ; Kuroki, Nobutaka ; Numa, Masahiro

Author_Institution

Panasonic Corp., Kadoma, Japan

Volume

48

Issue

6

fYear

2013

fDate

6/1/2013 12:00:00 AM

Firstpage

1530

Lastpage

1538

Abstract

This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18-μm CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub-BGR circuits corresponded to 100 and 52.5 nW.

Keywords

CMOS analogue integrated circuits; MOSFET; bipolar transistors; large scale integration; reference circuits; CMOS process; MOSFET; PTAT voltage generators; bipolar transistor; nanoampere current reference circuit; nanowatt CMOS LSI; power 100 nW; power 52.5 W; power dissipations; proportional-to-absolute-temperature voltage generators; sub-BGR circuits; subbandgap reference circuits; voltage 0.55 V; voltage 0.7 V; voltage 1.09 V; voltage 1.2 V; Bipolar transistors; Generators; Logic gates; MOSFET; Photonic band gap; Resistors; Threshold voltage; Bandgap reference (BGR) circuits; CMOS analog integrated circuits; low voltage; nanowatt; reference circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2013.2252523

Filename

6493460