Amorphous Indium–Gallium–Oxide UV Photodetectors

Author

Chang, Ting-Hao ; Chang, Shoou-Jinn ; Weng, Wen-Yin ; Chiu, Chiu-Jung ; Wei, Chi-Yu

Author_Institution

Department of Electrical EngineeringAdvanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

Volume

27

Issue

19

fYear

2015

Firstpage

2083

Lastpage

2086

Abstract

We report the fabrication of amorphous (In_xGa_1−x)₂O₃ metal–semiconductor–metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In₂O₃ target. With 5 V applied bias, it was found that the measured dark currents were $2\\times 10^{-12}$ , $1\\times 10^{-11}$ , and $2.3,\\times , 10^{-11}$ A for sample A prepared with 40 W In₂O₃ sputtering power, sample B prepared with 50 W In₂O₃ sputtering power, and sample C prepared with 60 W In₂O₃ sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were $3\\times 10^{3}$ , $5\\times 10^{3}$ , and $1.5\\times 10^{4}$ for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.

Keywords

Current measurement; Fabrication; Phototransistors; Sputtering; Substrates; Wavelength measurement; IGO; MSM photodetectors; response time;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2453317

Filename

7152846