Title :
10-bit 30-MS/s SAR ADC Using a Switchback Switching Method
Author :
Guan-Ying Huang ; Soon-Jyh Chang ; Chun-Cheng Liu ; Ying-Zu Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/2013 12:00:00 AM
Abstract :
This brief presents a 10-bit 30-MS/s successive-approximation-register analog-to-digital converter (ADC) that uses a power efficient switchback switching method. With respect to the monotonic switching method, the input common-mode voltage variation reduces which improves the dynamic offset and the parasitic capacitance variation of the comparator. The proposed switchback switching method does not consume any power at the first digital-to-analog converter switching, which can reduce the power consumption and design effort of the reference buffer. The prototype was fabricated in a 90-nm 1P9M CMOS technology. At 1-V supply and 30 MS/s, the ADC achieves an sequenced neighbor double reservation of 56.89 dB and consumes 0.98 mW, resulting in a figure-of-merit (FOM) of 57 fJ/conversion-step. The ADC core occupies an active area of only 190 × 525 μm2.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); switching convertors; 1P9M CMOS technology; FOM; SAR ADC; analog-to-digital converter; comparator; digital-to-analog converter switching; dynamic offset reduction; figure-of-merit; gain 56.89 dB; input common-mode voltage variation; monotonic switching method; parasitic capacitance variation; power 0.98 mW; power consumption; power efficient switchback switching method; reference buffer; sequenced neighbor double reservation; size 90 nm; successive-approximation-register; voltage 1 V; word length 10 bit; CMOS integrated circuits; Capacitors; Frequency measurement; Parasitic capacitance; Power demand; Switches; Analog-to-digital converter (ADC); energy efficient switching method; low input capacitance; successive approximation; successive-approximation-register (SAR) ADC;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2012.2190117