• DocumentCode
    737868
  • Title

    Adaptive Read Thresholds for NAND Flash

  • Author

    Peleato, Borja ; Agarwal, Rajiv ; Cioffi, John M. ; Qin, Minghai ; Siegel, Paul H.

  • Volume
    63
  • Issue
    9
  • fYear
    2015
  • Firstpage
    3069
  • Lastpage
    3081
  • Abstract
    A primary source of increased read time on nand flash comes from the fact that, in the presence of noise, the flash medium must be read several times using different read threshold voltages for the decoder to succeed. This paper proposes an algorithm that uses a limited number of rereads to characterize the noise distribution and recover the stored information. Both hard and soft decoding are considered. For hard decoding, this paper attempts to find a read threshold minimizing bit error rate (BER) and derives an expression for the resulting codeword error rate. For soft decoding, it shows that minimizing BER and minimizing codeword error rate are competing objectives in the presence of a limited number of allowed rereads, and proposes a tradeoff between the two. The proposed method does not require any prior knowledge about the noise distribution but can take advantage of such information when it is available. Each read threshold is chosen based on the results of previous reads, following an optimal policy derived through a dynamic programming backward recursion. The method and results are studied from the perspective of an SLC Flash memory with Gaussian noise, but this paper explains how the method could be extended to other scenarios.
  • Keywords
    Accuracy; Ash; Bit error rate; Decoding; Noise; Parity check codes; Threshold voltage; Flash memory; adaptive read; multi-level memory; soft information; symmetric capacity; voltage threshold;
  • fLanguage
    English
  • Journal_Title
    Communications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0090-6778
  • Type

    jour

  • DOI
    10.1109/TCOMM.2015.2453413
  • Filename
    7152879