DocumentCode :
737966
Title :
A 6-b 4.1-GS/s Flash ADC With Time-Domain Latch Interpolation in 90-nm CMOS
Author :
Jong-In Kim ; Ba-Ro-Saim Sung ; Wan Kim ; Seung-Tak Ryu
Author_Institution :
KAIST, Daejeon, South Korea
Volume :
48
Issue :
6
fYear :
2013
fDate :
6/1/2013 12:00:00 AM
Firstpage :
1429
Lastpage :
1441
Abstract :
A 6-b 4.1-GS/s flash ADC was fabricated using a 90-nm CMOS with a time-domain latch interpolation technique that reduces the number of front-end dynamic comparators by half. The reduced number of comparators lowers power consumption, load capacitance to the T/H circuit, and the overhead of comparator calibration. The measured peak INL and DNL after comparator calibration are 0.74 and 0.49 LSB, respectively. The measured SNDR and SFDR are 31.2 and 38.3 dB, respectively, with a 2.02-GHz input at 4.1-GS/s operation while consuming 76 mW of total power. This ADC achieves a figure of merit of 0.625 pJ/conversion-step at 4.1 GS/s.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); flash memories; interpolation; power consumption; time-domain analysis; CMOS; DNL; INL; SFDR; SNDR; T-H circuit; comparator calibration; flash ADC; frequency 2.02 GHz; front-end dynamic comparators; gain 31.2 dB to 38.3 dB; load capacitance; power con- sumption; size 90 nm; time-domain latch interpolation technique; Ash; Calibration; Clocks; Interpolation; Latches; Noise; Time-domain analysis; Flash ADC; high-speed comparator; offset calibration; time-domain latch interpolation;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2252516
Filename :
6494317
Link To Document :
بازگشت