• DocumentCode
    73797
  • Title

    Novel technique for lateral high-voltage totem-pole power devices

  • Author

    Moufu Kong ; Xingbi Chen

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    7
  • Issue
    9
  • fYear
    2014
  • fDate
    Sep-14
  • Firstpage
    2396
  • Lastpage
    2402
  • Abstract
    A novel technique and related structure for a high-voltage integrated circuit (IC) with totem-pole high-voltage devices are proposed. In this technique, a low control voltage with respect to the tub is used to drive the high-side device in the totem pole through a low-voltage tub circuit, as well as through very small low-side device to drive a low-voltage ground circuit, which in turn drives the low-side device in the totem pole. Therefore, the high-voltage level-shifting circuit can be replaced by the tub circuit which takes only a very small area and has no parasitic effects in comparison with that in the conventional totem-pole high-voltage IC. The structure of low-voltage power supplies for low-voltage ICs is also proposed. The results of numerical simulation verify the applicability of the proposed structure.
  • Keywords
    low-power electronics; power MOSFET; power integrated circuits; LDMOS devices; high-voltage integrated circuit; high-voltage level-shifting circuit; lateral high-voltage totem-pole power devices; low control voltage; low-voltage ground circuit; low-voltage power supply; low-voltage tub circuit; numerical simulation; small low-side device; totem-pole high-voltage IC;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IET
  • Publisher
    iet
  • ISSN
    1755-4535
  • Type

    jour

  • DOI
    10.1049/iet-pel.2013.0561
  • Filename
    6900863