Title :
Novel technique for lateral high-voltage totem-pole power devices
Author :
Moufu Kong ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel technique and related structure for a high-voltage integrated circuit (IC) with totem-pole high-voltage devices are proposed. In this technique, a low control voltage with respect to the tub is used to drive the high-side device in the totem pole through a low-voltage tub circuit, as well as through very small low-side device to drive a low-voltage ground circuit, which in turn drives the low-side device in the totem pole. Therefore, the high-voltage level-shifting circuit can be replaced by the tub circuit which takes only a very small area and has no parasitic effects in comparison with that in the conventional totem-pole high-voltage IC. The structure of low-voltage power supplies for low-voltage ICs is also proposed. The results of numerical simulation verify the applicability of the proposed structure.
Keywords :
low-power electronics; power MOSFET; power integrated circuits; LDMOS devices; high-voltage integrated circuit; high-voltage level-shifting circuit; lateral high-voltage totem-pole power devices; low control voltage; low-voltage ground circuit; low-voltage power supply; low-voltage tub circuit; numerical simulation; small low-side device; totem-pole high-voltage IC;
Journal_Title :
Power Electronics, IET
DOI :
10.1049/iet-pel.2013.0561