Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits

Author

Woo Young Choi ; Yong Jun Kim

Author_Institution

Sogang Univ., Seoul, South Korea

Volume

36

Issue

9

fYear

2015

Firstpage

887

Lastpage

889

Abstract

Complementary-metal-oxide-semiconductor(CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid reconfigurable circuits, only the standard CMOS baseline process has been used except for the hydrofluoric acid vapor etch to release the NEM structures and focused-ion-beam patterning to define small patterns.

Keywords

CMOS integrated circuits; focused ion beam technology; hybrid integrated circuits; nanoelectromechanical devices; 3D CMOS-NEM hybrid reconfigurable circuits; NEM structures; complementary metal oxide semiconductor circuits; focused ion beam patterning; nanoelectromechanical hybrid reconfigurable circuits; standard CMOS baseline process; three-dimensional integration; CMOS integrated circuits; Inverters; Metals; Optical switches; Switching circuits; Three-dimensional displays; Complementary-metal-oxide-semiconductor (CMOS); complementary-metal-oxide-semiconductor (CMOS); nano-electromechanical (NEM) memory switch; reconfigurable cicuit; three-dimensional (3D) integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2455556

Filename

7155499