DocumentCode
738120
Title
Quasi-Single-Grain Pb(Zr,Ti)O 3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device
Author
Jae Hyo Park ; Seung Ki Joo
Author_Institution
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Volume
15
Issue
3
fYear
2015
Firstpage
417
Lastpage
422
Abstract
Quasi-single-grained Pb(Zr,Ti)O 3 (PZT) was successfully grown for the gate dielectric of a poly-Si thin-film transistor (TFT) in a metal-ferroelectric-insulator-semiconductor memory structure. The quasi-single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dot arrays and was enlarged by the nucleated PZT seeds until it covers the poly-Si channel. The single-grained diameter size was 40 μm with a (100) dominated texture. The poly-Si memory device with the single-grained PZT showed excellent ferroelectric, electrical, and reliability properties compared with the poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in a PZT film showed the fatigue and retention characteristics with only 1.1% after 1013 cycles and 22% after 1 month.
Keywords
dielectric devices; fatigue; grain boundaries; lead compounds; nucleation; random-access storage; thin film transistors; titanium compounds; zirconium compounds; PbTiO3; PbZrO3; gate dielectric; grain boundary; highly reliable nonvolatile memory device; metal-ferroelectric-insulator-semiconductor memory structure; poly-Si TFT; poly-grained PZT; quasi-single-grain; single-grained diameter size; thin-film transistor; Electrodes; Fatigue; Grain boundaries; Logic gates; Materials reliability; Nonvolatile memory; Thin film transistors; Poly-Si thin-film transistor; fatigue cycle; grain boundary; nonvolatile memory; retention time;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2015.2455506
Filename
7155553
Link To Document