Title :
Fatigue Properties of ITO and Graphene on Flexible Substrates
Author :
Paradee, Gary ; Martin, Tom ; Christou, Aris
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
The first determination of the fatigue behavior of Graphene and Indium Tin Oxide (ITO) as interconnect materials for electronic components on flexible substrates is reported. ITO and Graphene samples were fabricated on Silicon Nitride (Si 3N 4)/Polyethylene Naphthalate (PEN) substrates. The results of the in-depth characterization of Graphene are reported based on atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM). The fatigue characteristics of ITO were determined at stress amplitudes ranging from 400 to 600 MPa. The fatigue characteristics of Graphene were determined at stress amplitudes ranging from 40 to 80 GPa. The S-N curves showed that Graphene´s endurance limit is 40 GPa, whereas ITO showed an endurance limit of 400 MPa.
Keywords :
Raman spectra; atomic force microscopy; fatigue; graphene; indium compounds; interconnections; organic compounds; scanning electron microscopy; silicon compounds; tin compounds; C; ITO; Raman spectroscopy; Si3N4; atomic force microscopy; electronic components; endurance limit; fatigue; flexible substrates; graphene; indium tin oxide; interconnect materials; polyethylene naphthalate substrates; scanning electron microscopy; stress amplitudes; Fatigue; Films; Graphene; Indium tin oxide; Strain; Stress; Substrates; Graphene; fatigue; flexible electronics; indium tin oxide;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2015.2457296
