Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices

Author

Hosseini, Peiman ; Sebastian, Abu ; Papandreou, Nikolaos ; Wright, C. David ; Bhaskaran, Harish

Author_Institution

Dept. of Mater., Univ. of Oxford, Oxford, UK

Volume

36

Issue

9

fYear

2015

Firstpage

975

Lastpage

977

Abstract

Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.

Keywords

field effect transistors; phase change materials; phase change memories; FET access devices; accumulation-based computing; accumulative property; non-von Neumann arithmetic processing; parallelized computations; phase-change devices; phase-change materials; phase-change memories; Field effect transistors; Performance evaluation; Phase change materials; Phase change memory; Reliability; Resistance; Switches; Phase-change materials; arithmetic computing; neuromorphic computing; non-von Neumann; phase-change materials;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2457243

Filename

7159045