The Jitter Time of GaAs Photoconductive Switch Triggered by 532- and 1064-nm Laser Pulse

Author

Huaimeng Gui ; Wei Shi ; Cheng Ma ; Linlin Fan ; Lin Zhang ; Song Zhang ; Yujuan Xu

Author_Institution

Dept. of Appl. Phys., Xi´an Univ. of Technol., Xi´an, China

Volume

27

Issue

19

fYear

2015

Firstpage

2001

Lastpage

2003

Abstract

A jitter time test of GaAs photoconductive semiconductor switch (PCSS) with excitation laser wavelength of 1064 and 532 nm is presented. When the laser pulse energy increases from 10.0 to 165.0 μJ with 8-ns laser pulse width, the corresponding jitter time decreases from 96.4 to 86.6 ps at 1064 nm and 71.6 to 63.3 ps at 532 nm, respectively. All measurements are carried out at a constant electrode gap size of 2 mm. The analysis indicates that the jitter time is proportional to the laser absorption depth in GaAs PCSS. These findings are important for decreasing the jitter time in X-ray streak camera and other accurate synchronization systems.

Keywords

III-V semiconductors; gallium arsenide; laser beams; optical switches; photoconducting switches; timing jitter; GaAs; GaAs PCSS; GaAs photoconductive semiconductor switch; X-ray streak camera; constant electrode gap size; energy 10 muJ to 165 muJ; excitation laser wavelength; jitter time test; laser absorption depth; laser pulse energy; laser pulse width; size 2 mm; synchronization systems; time 71.6 ps to 63.3 ps; time 8 ns; time 96.4 ps to 86.6 ps; wavelength 1064 nm; wavelength 532 nm; Absorption; Gallium arsenide; Jitter; Laser excitation; Measurement by laser beam; Switches; Photoconductive semiconductor switch (PCSS); linear mode; photoconductive semiconductor switch (PCSS); the jitter time;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2444914

Filename

7160691