DocumentCode :
738707
Title :
Design of ESD Protection Device for 
-Band Applications in Nanoscale CMOS Process
Author :
Chun-Yu Lin ; Rong-Kun Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan
Volume :
62
Issue :
9
fYear :
2015
Firstpage :
2824
Lastpage :
2829
Abstract :
An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ~100 × 100 μm2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.
Keywords :
CMOS integrated circuits; electrostatic discharge; elemental semiconductors; field effect MIMIC; field effect MMIC; inductors; rectifiers; silicon; ESD protection device; K-band applications; Ka-band applications; LASCR device; Si; bidirectional ESD current paths; electrostatic discharge; frequency 18 GHz to 40 GHz; human-body-model; inductor-assisted silicon-controlled rectifier; loss 1 dB to 3 dB; nanoscale CMOS process; silicon chip; voltage 4 kV to 7.5 kV; CMOS integrated circuits; CMOS process; Electrostatic discharges; Inductors; Radio frequency; Robustness; Thyristors; $K$ -band; $Ka$ -band; CMOS; K-band; Ka-band; electrostatic discharge (ESD); silicon-controlled rectifier (SCR); silicon-controlled rectifier (SCR).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2450225
Filename :
7163314
Link To Document :
