A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth

Author

Schellenberg, James M.

Author_Institution

QuinStar Technol., Torrance, CA, USA

Volume

63

Issue

9

fYear

2015

Firstpage

2833

Lastpage

2840

Abstract

A high-power gallium-nitride (GaN) monolithic microwave integrated circuit (MMIC) operating over the 75-100-GHz band is reported. Using an on-chip traveling-wave power-combining network, it achieves a continuous wave output power level of 34 dBm (2.5 W) ±1 dB over the 75-100-GHz bandwidth and a peak power of 3 W at 84 GHz. Operating in a pulsed mode (10% duty), the MMIC chip produces a peak power of 3.6 W at 83 GHz. This work establishes new levels of performance for GaN MMICs at these frequencies. In comparison to the previous work, these results represent improvements in output power, bandwidth, and gain/power flatness with frequency across the full 75-100-GHz band. This paper also presents design details on the combining network and the MMIC not previously reported.

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; power combiners; travelling wave amplifiers; wide band gap semiconductors; GaN; MMIC chip; W band GaN traveling wave amplifier; bandwidth 25 GHz; bandwidth 75 GHz to 100 GHz; high-power monolithic microwave integrated circuit; on chip traveling wave; power 2 W; power combining network; pulsed mode; Bandwidth; Couplers; Couplings; Gallium nitride; Logic gates; MMICs; Power generation; Gallium–nitride (GaN); W-band; monolithic microwave integrated circuits (MMICs); power combining; solid-state power amplifier (SSPA);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2015.2453156

Filename

7163630