Title :
Low-Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing
Author :
Lin-Qing Zhang ; Jin-Shan Shi ; Hong-Fan Huang ; Xiao-Yong Liu ; Sheng-Xun Zhao ; Peng-Fei Wang ; Zhang, David Wei
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs). Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic contact resistance with much smoother surface of ohmic contacts. The spike mechanism is observed in our ohmic contact annealed by microwave under a low-temperature condition. Besides, MWA-HEMTs have higher ION/IOFF ratio and lower gate leakage current than the fabricated RTA-HEMTs in this letter.
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; leakage currents; ohmic contacts; rapid thermal annealing; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN high electron mobility transistors; HEMT; gate leakage current; low-temperature microwave annealing; low-temperature ohmic contact formation; ohmic contact resistance; rapid thermal annealing; spike mechanism; Aluminum gallium nitride; Annealing; Gallium nitride; Ohmic contacts; Surface morphology; Wide band gap semiconductors; Ohmic contact; low temperature; microwave annealing (MWA); surface morphology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2461545
