• DocumentCode
    73922
  • Title

    A Novel Design for a Memristor-Based or Gate

  • Author

    Yang Zhang ; Yi Shen ; Xiaoping Wang ; Yanwen Guo

  • Author_Institution
    Sch. of Autom., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • Volume
    62
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    781
  • Lastpage
    785
  • Abstract
    This brief proposes a logic gate that performs a stateful or logic operation on memristor memory. The presented logic structure concurrently executes an or operation in the nanocrossbar architecture in a single step, which enables a fast logic operation and reduces the number of required memristors. The proposed circuit completes the in situ logic operation on the memristor memory, which alleviates the burden of the processor significantly. Through analysis and simulation, the feasibility of the or operation is demonstrated, and the parameter optimization is analyzed.
  • Keywords
    logic design; logic gates; memristor circuits; fast logic operation; in situ logic operation; logic gate; logic structure; memristor memory; nanocrossbar architecture; parameter optimization; Computer architecture; Integrated circuit modeling; Logic circuits; Logic gates; Memristors; Microprocessors; Threshold voltage; Material implication; Memristor; OR gate; material implication; memristor; nanocrossbar memory; or gate; stateful logic;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2015.2435354
  • Filename
    7111287