DocumentCode
73922
Title
A Novel Design for a Memristor-Based or Gate
Author
Yang Zhang ; Yi Shen ; Xiaoping Wang ; Yanwen Guo
Author_Institution
Sch. of Autom., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
62
Issue
8
fYear
2015
fDate
Aug. 2015
Firstpage
781
Lastpage
785
Abstract
This brief proposes a logic gate that performs a stateful or logic operation on memristor memory. The presented logic structure concurrently executes an or operation in the nanocrossbar architecture in a single step, which enables a fast logic operation and reduces the number of required memristors. The proposed circuit completes the in situ logic operation on the memristor memory, which alleviates the burden of the processor significantly. Through analysis and simulation, the feasibility of the or operation is demonstrated, and the parameter optimization is analyzed.
Keywords
logic design; logic gates; memristor circuits; fast logic operation; in situ logic operation; logic gate; logic structure; memristor memory; nanocrossbar architecture; parameter optimization; Computer architecture; Integrated circuit modeling; Logic circuits; Logic gates; Memristors; Microprocessors; Threshold voltage; Material implication; Memristor; OR gate; material implication; memristor; nanocrossbar memory; or gate; stateful logic;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2015.2435354
Filename
7111287
Link To Document