Title :
An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel
Author :
Mengxuan Jiang ; Xin Yin ; Zhikang Shuai ; Jun Wang ; Shen, Z. John
Author_Institution :
Coll. of Electr. & Inf. Eng., Hunan Univ., Changsha, China
Abstract :
This letter proposes a novel collector trench insulated-gate bipolar transistor (IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect with a backside lithography process. TCAD simulation indicates that the new IGBT structure offers a turnoff fall time 74% lower than a conventional field-stop IGBT with a similar breakdown voltage, leakage current, threshold voltage, and forward current density, providing a new option for power electronic applications.
Keywords :
current density; electric breakdown; insulated gate bipolar transistors; leakage currents; lithography; semiconductor device models; IGBT; TCAD simulation; backside lithography process; breakdown voltage; collector trench electron extraction channel; forward current density; insulated gate bipolar transistor; leakage current; threshold voltage; Current density; Electric fields; Insulated gate bipolar transistors; Logic gates; Numerical models; Switches; Threshold voltage; Breakdown Voltage; Breakdown voltage; Current Desity; Fall Time; IGBT; Threshold Voltage.; current desity; fall time; threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2462807
