An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel

Author

Mengxuan Jiang ; Xin Yin ; Zhikang Shuai ; Jun Wang ; Shen, Z. John

Author_Institution

Coll. of Electr. & Inf. Eng., Hunan Univ., Changsha, China

Volume

36

Issue

9

fYear

2015

Firstpage

935

Lastpage

937

Abstract

This letter proposes a novel collector trench insulated-gate bipolar transistor (IGBT) with an electron extraction channel formed on the collector side to enhance the electron extraction effect with a backside lithography process. TCAD simulation indicates that the new IGBT structure offers a turnoff fall time 74% lower than a conventional field-stop IGBT with a similar breakdown voltage, leakage current, threshold voltage, and forward current density, providing a new option for power electronic applications.

Keywords

current density; electric breakdown; insulated gate bipolar transistors; leakage currents; lithography; semiconductor device models; IGBT; TCAD simulation; backside lithography process; breakdown voltage; collector trench electron extraction channel; forward current density; insulated gate bipolar transistor; leakage current; threshold voltage; Current density; Electric fields; Insulated gate bipolar transistors; Logic gates; Numerical models; Switches; Threshold voltage; Breakdown Voltage; Breakdown voltage; Current Desity; Fall Time; IGBT; Threshold Voltage.; current desity; fall time; threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2462807

Filename

7172483