Title :
Simulation Study of Node-State Transition Effect on the Single-Event Transient
Author :
Liu Biwei ; Du Yankang ; Li Zhao ; Li Lei
Author_Institution :
Coll. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
Using 3-D technology computer-aided design numerical simulation, we comprehensively analyze the impact of node-state transition on a single-event transient (SET) pulse. Simulation results present that the SET pulsewidth is a function of the node current state and the state transition time. Based on the simulation results, we quantize the difference between the static SET injection and the dynamic SET injection.
Keywords :
circuit CAD; integrated circuit design; numerical analysis; radiation hardening (electronics); 3D technology; SET pulsewidth; computer-aided design; dynamic SET injection; node current state; node-state transition effect; numerical simulation; single-event transient; state transition time; static SET injection; Combinational circuits; Inverters; MOSFET; Numerical models; Semiconductor device modeling; Simulation; Thigh; Clock frequency; SET; clock frequency; state transition;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2015.2462129
