DocumentCode :
739284
Title :
Investigation of Hot Carrier Stress and Constant Voltage Stress in High- 
Si-Based TFETs
Author :
Lili Ding ; Gnani, Elena ; Gerardin, Simone ; Bagatin, Marta ; Driussi, Francesco ; Palestri, Pierpaolo ; Selmi, Luca ; Le Royer, Cyrille ; Paccagnella, Alessandro
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Volume :
15
Issue :
2
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
236
Lastpage :
241
Abstract :
This paper reports the experimental investigation of hot carrier stress (HCS) and constant voltage stress (CVS) in high-κ Si-based tunnel FETs. For the devices in this paper, due to the large injection of cold carriers and to the presence of traps in the gate dielectric, the degradation of the transfer characteristics under CVS is much more severe than under HCS. The experimental results show that the sub-threshold swing remains stable under both HCS and CVS conditions, and it is not influenced by the stress-induced increase of the interface trap density.
Keywords :
charge injection; dielectric devices; elemental semiconductors; field effect transistors; hot carriers; interface states; silicon; tunnel transistors; CVS conditions; HCS conditions; Si; cold carrier injection; constant voltage stress; gate dielectric; high-κ Si-based TFET; high-κ Si-based tunnel FET; hot carrier stress; interface trap density; subthreshold swing; transfer characteristics degradation; Current measurement; Degradation; Hot carriers; Logic gates; MOSFET; Pulse measurements; Stress; Constant voltage stress; High- dielectric; Hot carrier stress; Tunnel FET; constant voltage tress; high-?? dielectric; hot carrier stress;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2015.2423095
Filename :
7086030
Link To Document :
