• DocumentCode
    739477
  • Title

    Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]

  • Author

    Liu, Cheng ; Yang, Shu ; Liu, Shenghou ; Tang, Zhikai ; Wang, Hanxing ; Jiang, Qimeng ; Chen, Kevin J.

  • Author_Institution
    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
  • Volume
    36
  • Issue
    6
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    624
  • Lastpage
    624
  • Abstract
    Al2O3/AlGaN/GaN enhancement-mode (E-mode) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a partially recessed (Al)GaN barrier was realized by a fluorine-plasma implantation/etch technique.
  • Keywords
    Aluminum gallium nitride; Gallium nitride; HEMTs; Thermal stability; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2423611
  • Filename
    7087352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=739477