Title :
Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays
Author_Institution :
Globalfoundries, Santa Clara, CA, USA
Abstract :
Scalable two-terminal selector devices are key technology enablers for cross-bar array (CBA) architectures. Based on an analysis of CBA and sneak path, this paper discusses the essential characteristics of selector devices for the reduction of sneak leakage: nonlinearity and asymmetry. Both characteristics help to increase the resistance of sneak paths and reduce their impact on CBA operations. The reduction of sneak leakage and the improvement of CBA performance by selectors are quantified based on a comprehensive CBA model. The writing and reading operations of a 4-kb CBA are simulated as a case study, to analyze the effect of selector characteristics on CBA operations.
Keywords :
random-access storage; cross-bar array architectures; cross-bar memory arrays; device selection asymmetry; device selection nonlinearity; reading operations; scalable two-terminal selector devices; sneak leakage; storage capacity 4 Kbit; writing operations; Junctions; Performance evaluation; Resistance; Schottky diodes; Threshold voltage; Voltage measurement; Writing; Asymmetry; cross-bar array (CBA); memory; nonlinearity; selector devices; selector devices.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2450712
