DocumentCode :
739572
Title :
A Comparison Between Single-Phase Quasi- Z -Source and Quasi-Switched Boost Inverters
Author :
Nguyen, Minh-Khai ; Lim, Young-Cheol ; Park, Sung-Jun
Volume :
62
Issue :
10
fYear :
2015
Firstpage :
6336
Lastpage :
6344
Abstract :
The properties of a single-phase quasi- Z -source inverter (qZSI) and a single-phase quasi-switched boost inverter (qSBI), both of which are single-stage buck-boost inverters, are investigated and compared. For the same operating conditions, qSBI has the following advantages over qZSI: 1) Three capacitors are saved; 2) the current rating on both of its switches and diodes is lower; 3) its boost factor is higher with an equivalent parasitic effect; and 4) its efficiency is higher. However, qSBI has one more active switch and one more diode than Z -source/qZSIs. In additi on, the capacitor voltage stress of qSBI is higher than that of qZSI. The dc and ac component circuit analysis, impedance design with low-frequency and high-frequency ripples, component stresses, and power loss calculation are presented. A prototype based on a TMS320F28335 DSP is built in order to compare the operating principle of qSBI and qZSI.
Keywords :
Capacitance; Capacitors; Inductance; Inductors; Inverters; Stress; Topology; Boost inversion ability; Quasi-Z-source inverter; boost inversion ability; quasi- $Z$-source inverter (qZSI); quasi-switched boost inverter; quasi-switched boost inverter (qSBI); shoot-through state;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/TIE.2015.2424201
Filename :
7088623
Link To Document :
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