• DocumentCode
    739572
  • Title

    A Comparison Between Single-Phase Quasi- Z -Source and Quasi-Switched Boost Inverters

  • Author

    Nguyen, Minh-Khai ; Lim, Young-Cheol ; Park, Sung-Jun

  • Volume
    62
  • Issue
    10
  • fYear
    2015
  • Firstpage
    6336
  • Lastpage
    6344
  • Abstract
    The properties of a single-phase quasi- Z -source inverter (qZSI) and a single-phase quasi-switched boost inverter (qSBI), both of which are single-stage buck-boost inverters, are investigated and compared. For the same operating conditions, qSBI has the following advantages over qZSI: 1) Three capacitors are saved; 2) the current rating on both of its switches and diodes is lower; 3) its boost factor is higher with an equivalent parasitic effect; and 4) its efficiency is higher. However, qSBI has one more active switch and one more diode than Z -source/qZSIs. In additi on, the capacitor voltage stress of qSBI is higher than that of qZSI. The dc and ac component circuit analysis, impedance design with low-frequency and high-frequency ripples, component stresses, and power loss calculation are presented. A prototype based on a TMS320F28335 DSP is built in order to compare the operating principle of qSBI and qZSI.
  • Keywords
    Capacitance; Capacitors; Inductance; Inductors; Inverters; Stress; Topology; Boost inversion ability; Quasi-Z-source inverter; boost inversion ability; quasi- $Z$-source inverter (qZSI); quasi-switched boost inverter; quasi-switched boost inverter (qSBI); shoot-through state;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.2015.2424201
  • Filename
    7088623