DocumentCode
739700
Title
InAs Diodes Fabricated Using Be Ion Implantation
Author
White, Benjamin S. ; Sandall, Ian C. ; David, John P. R. ; Chee Hing Tan
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume
62
Issue
9
fYear
2015
Firstpage
2928
Lastpage
2932
Abstract
Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.
Keywords
III-V semiconductors; annealing; indium compounds; ion implantation; semiconductor diodes; semiconductor doping; InAs; annealing conditions; ion implantation; planar diodes; Annealing; Dark current; Implants; Ion implantation; Schottky diodes; Temperature; Annealing; indium arsenide; ion implantation; photodiode; photodiode.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2456434
Filename
7180358
Link To Document